| PART |
Description |
Maker |
| BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| IC43R16160-7TG IC43R16160-6TG |
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM 4米16位4个银行（256兆）DDR SDRAM内存
|
Panasonic, Corp.
|
| IS24C08-2 IS24C08-2G IS24C08-2GI IS24C08-2P IS24C0 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit2-WIRESERIALCMOSEEPROM
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
|
ETC[ETC]
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| W942516CH W942516CH-75 W942516CH-5 W942516CH-6 |
DDR SDRAM (Double Data Rate)
4M X 4 BANKS X 16 BIT DDR SDRAM
From old datasheet system
|
Winbond Electronics
|
| UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
2M X 18 DDR SRAM, 0.45 ns, PBGA165
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| W942508CH W942508CH-75 W942508CH-5 W942508CH-6 W94 |
DDR SDRAM (Double Data Rate)
8M x 4 BANKS x 8 BIT DDR SDRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| IDT72T40108 IDT72T4088IDT72T4098 IDT72T4098 |
2.5 VOLT HIGH-SPEED TeraSync? DDR/SDR FIFO 40-BIT CONFIGURATION
2.5 VOLT HIGH-SPEED TeraSync™ DDR FIFO 40-BIT CONFIGURATION
|
IDT
|
| W942516AH |
4M x 4 BANKS x 16 BIT DDR SDRAM
|
WINBOND[Winbond]
|
| M14D5121632A-3BIG M14D5121632A1 |
8M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| AD7548 AD7548AQ AD7548BQ AD7548JN AD7548JP AD7548J |
LC2MOS 8-BIT uP COMPATIBLE 12-BIT DAC PARALLEL, WORD INPUT LOADING, 1.5 us SETTLING TIME, 8-BIT DAC, PDIP20
12-Bit, Multiplying, I<SUB>OUT</SUB> DAC, 8-Bit Bus
|
Analog Devices, Inc.
|
